DS9667 Datasheet | National Semiconductor

Description The DS2003 DS9667 DS2004 are prised of seven high voltage high current NPN Darlington transistor pairs All units feature mon emitter open collector outputs To maximize their effectiveness these units contain suppression diodes for inductive loads and appropriate emitter base resistors for leakage The DS2003 DS9667 has a series base resistor to each Darlington pair thus allowing operation directly with TTL or CMOS operating at supply voltages of 5 0V The DS2004 has an appropriate input resistor to allow direct operation from CMOS or PMOS outputs operating from supply voltages of 6 0V to 15V The DS2003 DS9667 DS2004 offer solutions to a great many interface needs including solenoids relays lamps small motors and LEDs Applications requiring sink currents beyond the capability of a single output may be acmodated by paralleling the outputs Features Y Y Y Y Y Y Seven high gain Darlington pairs High output voltage (VCE e 50V) High output current (IC e 350 m A) TTL PMOS CMOS patible Suppression diodes for inductive loads Extended temperature range Connection Diagram Order Numbers J Package Number J16A N Package Number N16E DS2003TN DS2003CN DS9667TN DS9667CN M Package Number M16A DS2003TM DS2003CM 16-Lead DIP DS2003 DS9667 DS2003MJ DS2003TJ DS2003CJ DS9667MJ DS9667TJ DS9667CJ DS2004MJ DS2004TJ DS2004CJ DS2004 DS2004TN DS2004CN DS2004TM DS2004CM TL F 9647 - 1 Top View C1996 National Semiconductor Corporation TL F 9647 RRD-B30M66 Printed in U S A Absolute Maximum Ratings (Note 1) If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications Storage Temperature Range Ceramic DIP Molded DIP Operating Temperature Range DS2003M DS9667M DS2004M DS2003T DS9667T DS2004T DS2003C DS9667C DS2004C b 65 C to a 175 C b 65 C to a 150 C b 55 C to b 55 C to b 40 C to b 40 C to a 125 C a 125 C a 105 C a 105 C Lead Temperature Ceramic DIP (Soldering 60 seconds) Molded DIP...