LF442 Datasheet | National Semiconductor

Description The LF442 dual low power operational amplifiers provide many of the same AC characteristics as the industry standard LM1458 while greatly improving the DC characteristics of the LM1458. The amplifiers have the same bandwidth, slew rate, and gain (10 kΩ load) as the LM1458 and only draw one tenth the supply current of the LM1458. In addition the well matched high voltage JFET input devices of the LF442 reduce the input bias and offset currents by a factor of 10,000 over the LM1458. A bination of careful layout design and internal trimming guarantees very low input offset voltage and voltage drift. The LF442 also has a very low equivalent input noise voltage for a low power amplifier. The LF442 is pin patible with the LM1458 allowing an immediate 10 times reduction in power drain in many applications. The LF442 should be used where low power dissipation and good electrical characteristics are the major considerations. Features n 1/10 supply current of a LM1458: 400 µA (max) n Low input bias current: 50 p A (max) n Low input offset voltage: 1 m V (max) n Low input offset voltage drift: 10 µV/˚C (max) n High gain bandwidth: 1 MHz n High slew rate: 1 V/µs n Low noise voltage for low power: n Low input noise current: n High input impedance: 1012Ω n High gain VO = ±10V, RL = 10k: 50k (min) Typical Connection Connection Diagrams Metal Can Package Ordering Information LF442XYZ X indicates electrical grade Y indicates temperature range “M” for military “C” for mercial Z indicates package type “H” or “N” BI-FET II™ is a trademark of National Semiconductor Corporation. © 2004 National Semiconductor Corporation DS009155 Pin 4 connected to case Top View Order Number LF442AMH or LF442MH/883 See NS Package Number H08A Dual-In-Line Package Top View Order Number LF442ACN or LF442CN See NS Package Number N08E .national. Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the...