LM3086 Datasheet | National Semiconductor

Description The LM3045 LM3046 and LM3086 each consist of five general purpose silicon NPN transistors on a mon monolithic substrate Two of the transistors are internally connected to form a differentially-connected pair The transistors are well suited to a wide variety of applications in low power system in the DC through VHF range They may be used as discrete transistors in conventional circuits however in addition they provide the very significant inherent integrated circuit advantages of close electrical and thermal matching The LM3045 is supplied in a 14-lead cavity dualin-line package rated for operation over the full military temperature range The LM3046 and LM3086 are electrically identical to the LM3045 but are supplied in a 14-lead molded dual-in-line package for applications requiring only a limited temperature range Features Y Y Y Y Y Two matched pairs of transistors VBE matched g 5 m V Input offset current 2 m A max at IC e 1 m A Five general purpose monolithic transistors Operation from DC to 120 MHz Wide operating current range Low noise figure 3 2 d B typ at 1 k Hz Full military b 55 C to a 125 C temperature range (LM3045) Applications General use in all types of signal processing systems operating anywhere in the frequency range from DC to VHF Custom designed differential amplifiers Temperature pensated amplifiers Schematic and Connection Diagram Dual-In-Line and Small Outline Packages TL H 7950 - 1 Top View Order Number LM3045J LM3046M LM3046N or LM3086N See NS Package Number J14A M14A or N14A C1995 National Semiconductor Corporation TL H 7950 RRD-B30M115 Printed in U S A Absolute Maximum Ratings (TA e 25 C) If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications LM3045 LM3046 LM3086 Each Total Each Total Units Transistor Package Transistor Package Power Dissipation TA e 25 C 300 750 300 750 m W TA e 25 C to 55 C 300 750 m W TA l 55 C...