LM5060Q1 Datasheet | National Semiconductor

Description The LM5060 high-side protection controller provides intelligent control of a high-side N-Channel MOSFET during normal on/off transitions and fault conditions. In-rush current is controlled by the nearly constant rise time of the output voltage. A power good output indicates when the output voltage reaches the input voltage and the MOSFET is fully on. Input Under Voltage Lock-Out, with hysteresis, is provided as well as programmable input Over-Voltage Protection. An enable input provides remote On / Off control. The programmable Under-Voltage Lock-Out input can be used as second enable input for safety redundancy. A single capacitor programs the initial start-up VGS fault detection delay time, the transition VDS fault detection delay time, and the continuous Over-Current VDS fault detection delay time. When a detected fault condition persists longer than the allowed fault delay time, the MOSFET is latched off until either the Enable input or the Under-Voltage Lock-Out input is toggled low and then high. Features - - - - - - - - - - - - Automotive grade / AEC Q-100 Wide operating input voltage range: +5.5V to +65V Less than 15 µA quiescent current in disabled mode Controlled output rise time for safe connection of capacitive loads Charge pump gate driver for external N-Channel MOSFET Adjustable Under-Voltage Lock-Out (UVLO) with hysteresis UVLO serves as second enable input for systems requiring safety redundancy Programmable fault detection delay time MOSFET latched off after load fault is detected Active low open drain POWER GOOD (n PGD) output Adjustable input Over-Voltage Protection (OVP) Immediate restart after Over-Voltage shutdown Applications - Automotive Body Electronics - Industrial Power Distribution and Control Package - 10-Lead MINI-SOIC Typical Application .. © 2009 National Semiconductor Corporation .national. Connection Diagram 10-Lead MINI-SOIC Package (MSOP) NS Package Number MUB10A Ordering...