LM9061 Datasheet | National Semiconductor

Description The LM9061 is a charge-pump device which provides the gate drive to any size external power MOSFET configured as a high side driver or switch A CMOS logic patible ON OFF input controls the output gate drive voltage In the ON state the charge pump voltage which is well above the available VCC supply is directly applied to the gate of the MOSFET A built-in 15V zener clamps the maximum gate to source voltage of the MOSFET When manded OFF a 110 m A current sink discharges the gate capacitances of the MOSFET for a gradual turn-OFF characteristic to minimize the duration of inductive load transient voltages and further protect the power MOSFET Lossless protection of the power MOSFET is a key feature of the LM9061 The voltage drop (VDS) across the power device is continually monitored and pared against an externally programmable threshold voltage A small current sensing resistor in series with the load which causes a loss of available energy is not required for the protection circuitry Should the VDS voltage due to excessive load current exceed the threshold voltage the output is latched OFF in a more gradual fashion (through a 10 m A output current sink) after a programmable delay time interval Designed for the automotive application environment the LM9061 has a wide operating temperature range of b40 C to a 125 C remains operational with VCC up to 26V and can withstand 60V power supply transients The LM9061 is available in an 8-pin small outline package and an 8-pin dual in-line package Features Y Y Y Y Y Y Y Y Y Y Built-in charge pump for gate overdrive of high side drive applications Lossless protection of the power MOSFET Programmable MOSFET protection voltage Programmable delay of protection latch-OFF Fast turn-ON (1 5 ms max with gate capacitance of 25000 p F) Undervoltage shut OFF with VCC k 7V Overvoltage shut OFF with VCC l 26V Withstands 60V supply transients CMOS logic patible ON OFF control input Surface mount and dual in-line packages...