LME49990 Datasheet | National Semiconductor

Description The LME49990 is part of the ultra-low distortion, low noise, high slew rate operational amplifier series optimized and fully specified for high performance, high fidelity applications. The LME49990 bines low voltage noise density (0.9n V/√Hz) with vanishing low THD+N (0.00001%). The LME49990 has a high slew rate of ±22V/μs and an output current capability of ±27m A. It drives 600Ω loads to within 2V of either power supply voltage. The LME49990’s outstanding Gain (135d B), CMRR (137d B), PSRR (144d B), and VOS (130μV) give the amplifier excellent operational amplifier DC performance. The LME49990 has a wide supply range of ±5V to ±18V. The LME49990 is unity gain stable and is available in an 8-lead narrow body SOIC. Key Specifications -  Input Noise Density (f = 1k Hz) -  THD+N (AV = 1, VOUT = 3VRMS, f IN = 1k Hz) RL = 600Ω -  1/f Corner Frequency -  Slew Rate -  Gain Bandwidth (AV = 104, RL = 2kΩ, -  PSRR f = 90k Hz) -  CMRR -  Power Supply Voltage Range 0.9n V/√Hz (typ) 1.3n V/√Hz (max) 0.00001% 43Hz (typ) ±22V/μs (max) 110MHz (typ) 144d B (typ) 137d B (typ) ±5V to ±18V Features - Easily drives 600Ω load - Output short circuit protection Applications - Ultra high quality audio signal processing - Active Filters - Preamplifiers - Spectrum analyzers - Ultrasound preamplifiers - Sigma-Delta ADC/DAC buffers 300597e6 FIGURE 1. Voltage Noise Spectral Density Overture® is a registered trademark of National Semiconductor. © 2010 National Semiconductor Corporation 300597 300597d7 FIGURE 2. THD+N vs Frequency .national. Connection Diagram Order Number LME49990MA See NS Package Number -...