LMV243 Datasheet | National Semiconductor

Description The device is intended for use within an RF transmit power control loop in GSM mobile phones and supports Ga As HBT and bipolar RF single supply power amplifiers. The circuit operates with a single supply from 2.7V to 3.3V. The LMV243 contains an RF detector, error amplifier, ramp V/I converter and output driver. The LMV243 input interface consists of the RF input, Ramp voltage, and a digital input to perform the function ’Shutdown/Transmit Enable’. The device will be active in the case TX_EN = HI, otherwise, the device goes into a low power consumption shutdown mode. During shutdown the output will be in high impedance (tri-state). A single external RC bination is used to provide stable operations that acmodates individual PA characteristics. The LMV243 is offered in a 8-bump micro SMD 1.5mm x 1.5mm package. This space savings package supports flexible product placement almost anywhere in the circuitboard. Features (Typical Unless Otherwise Noted) n 50d B RF detection range (typical) n micro SMD package 1.5mm x 1.5mm x 0.995mm n Support of Ga As HBT, bipolar technology n Quad-band operation n Shutdown mode for Power Save in Rx slot n GPRS pliant n External loop pensation option n Accurate temperature pensation n Frequency range is 450MHz to 2GHz Applications n n n n GSM mobile phone AGC for digital audio TDMA RF control Wireless LAN Typical Application © 2002 National Semiconductor Corporation DS200290 .national. Absolute Maximum Ratings (Note 1) Mounting Temperature Infrared or convection (20 sec) 235˚C If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage VDD - GND ESD Tolerance (Note 2) Human Body Model Machine Model Storage Temperature Range Junction Temperature (Note 6) 2000V 200V - 65˚C to 150˚C 150˚C Max 4V Max Operating Ratings (Note 1) Nominal Supply Voltage Temperature Range VRAMP Voltage Range...