NDS7002A Datasheet | National Semiconductor

Description These n-channel enhancement mode field effect transistors are produced using National’s very high cell density third generation DMOS technology These products have been designed to minimize on-state resistance provide rugged and reliable performance and fast switching They can be used with a minimum of effort in most applications requiring up to 400 m A DC and can deliver pulsed currents up to 2A This product is particularly suited to low voltage low current applications such as small servo motor controls power MOSFET gate drivers and other switching applications Features Y Y Y Y Y Efficient high density cell design approaching (3 million in2) Voltage controlled small signal switch Rugged High saturation current Low RDS (ON) TL G 11378 - 2 TL G 11378- 1 TO-92 7000 Series TO-236 AB (SOT-23) 7002 Series TL G 11378 - 3 Absolute Maximum Ratings Symbol VDSS VDGR VGSS ID Parameter Drain-Source Voltage Drain-Gate Voltage (RGS s 1 MX) Gate-Source Voltage Drain Current Continuous Pulsed PD Total Power Dissipation Derating above 25 C TJ TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes from Case for 10 Seconds TA e 25 C 200 500 400 32 115 800 200 16 2N7000 2N7002 NDF7000A 60 60 g 40 Units V V V 400 2000 625 5 280 1500 300 24 b 65 to 150 m A m A m W m W C C C b 55 to 150 C1995 National Semiconductor Corporation TL G 11378 RRD-B30M115 Printed in U S A .. 2N7000 Electrical Characteristics TC e 25 C unless otherwise noted Symbol OFF CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS e 0V ID e 10 m A VDS e 48V VGS e 0V TC e 125 C IGSSF Gate-Body Leakage Forward VGS e b15V VDS e 0V 60 1 1 b 10 Parameter Conditions Min Typ Max Units V m A m A n A ON CHARACTERISTICS VGS(th) r DS(ON) Gate Threshold Voltage Static Drain-Source On-Resistance Drain-Source On-Voltage VDS e VGS ID e 1 m A VGS e 10V ID e 0 5A TC e 125 C VGS e 10V ID e 0 5A VGS e 4 5V ID e 75 m A...