NPD8301 Datasheet | National Semiconductor

Description The NPD8301 thru NPD8303 series of N-channel monolithic dual JFETs is designed for low cost, high per- formance differential amplifiers requiring tightly matched gate-source voltage, low drift, high monmode rejection, and low output conductance. Absolute Maximum Ratings (25°o Gate-to-Gate Voltage ±40V Gate-Drain or Gate-Source Voltage Gate Current Total Package Dissipation (25°C Free-Air) -40V 50 m A 350 m W Power Derating (to +125°C) 3.5 m W/°C Storage Temperature Range Operating Temperature Range -55°C to +125°C -55° C to +1 25° C Lead Temperature (1/16" from case for 10 seconds) 300°C Molded Dual-ln-Line Package (Nl Dos: (2.286) - - 110.160) ----w^l^lia 0.3DD-0 JZD ,- - X) 4i J Li J li J Lii tf PIN FET S1 D1 3 NC G1 S2 D2 7 NC 8 G2 Electrical Characteristics (25°c unless otherwise noted) IGSS VGSIoffl RAMETER Gate Reverse Current Gate-Source Cutoff Voltage CONDITIONS VDS = 0, V G S= -20V, (Note 1! VQS-20V, D...