NV6247C
Description
This half-bridge GaNFast™ power IC integrates high performance eMode GaN FETs with integrated gate drive, control and protection to achieve unprecedented high- frequency and high efficiency operation. GaNSense™ technology is also integrated which enables real-time, accurate sensing of voltage, current and temperature to further improve performance and robustness not achieved by any discrete GaN or discrete silicon device.
Key Features
- Wide VCC range (10 to 24 V)
- 3.3, 5, 12 V PWM input compatible
- Floating high-side with internal level shift
- Two independent logic inputs with hysteresis
- 200V/ns common mode transient immunity
- Integrated high-side bootstrap
- Shoot-through protection
- Turn-on dV/dt slew rate control (low-side and high-side)
- 800 V transient voltage rating
- 650 V continuous voltage rating
