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NV6252
650 V GaNFast™ Power IC
QFN 6 x 8 mm
Simplified schematic
1. Features
GaNFast Power IC • Two independent logic inputs with hysteresis • Enable Input • Ultra-low standby current • Wide VCC range • Low-side turn-on dV/dt slew rate control • 200 V/ns dV/dt immunity • ESD, high-side UVLO, shoot-through protection • Floating high-side with internal level shifter • Integrated high-side bootstrap • High-frequency operation up to 2Mhz
650 V eMode GaN FETs • 600 mΩ high-side FET • 300 mΩ low-side FET • Zero reverse recovery charge
Small, low-profile SMT QFN • 6 x 8 mm footprint, 0.85 mm profile • Minimized package inductance • RoHS, Pb-Free, REACH-complaint
Typical Application Circuits
2.
NV6252 Datasheet
