Datasheet4U Logo Datasheet4U.com

IRF13N50 - N-Channel Power MOSFET

Datasheet Summary

Description

The Nell IRF13N50 are N-channel enhancement mode silicon gate power field effect transistors.

They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation.

Features

  • RDS(ON) = 0.45Ω @ VGS = 10V Ultra low gate charge(81nC max. ) Low reverse transfer capacitance (C RSS = 11pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature G (Gate) S (Source).

📥 Download Datasheet

Datasheet preview – IRF13N50

Datasheet Details

Part number IRF13N50
Manufacturer Nell
File Size 269.92 KB
Description N-Channel Power MOSFET
Datasheet download datasheet IRF13N50 Datasheet
Additional preview pages of the IRF13N50 datasheet.

📁 Similar Datasheet

  • IRF130 - N-Channel Power MOSFET (Samsung semiconductor)
  • IRF130 - N-Channel Power MOSFET (Seme LAB)
  • IRF130 - N-Channel Power MOSFET (Intersil Corporation)
  • IRF130 - N-Channel Power MOSFET (International Rectifier)
  • IRF130 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF130 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF1302 - Power MOSFET (International Rectifier)
  • IRF1302L - Power MOSFET (International Rectifier)
  • IRF1302S - Power MOSFET (International Rectifier)
  • IRF130SMD - N-Channel Power MOSFET (Seme LAB)
Other Datasheets by Nell

Full PDF Text Transcription

Click to expand full text
SEMICONDUCTOR IRF13N50 Series N-Channel Power MOSFET (14A, 500Volts) RoHS RoHS Nell High Power Products DESCRIPTION The Nell IRF13N50 are N-channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. They are designed as an extremely efficient and reliable device for use in a wide variety of applications such as SMPS, UPS, convertors, motor drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These transistors can be operated directly from integrated circuits. G TO-220AB (IRF13N50A) D (Drain) D D S FEATURES RDS(ON) = 0.45Ω @ VGS = 10V Ultra low gate charge(81nC max.
Published: |