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IRF260 - N-Channel Power MOSFET

General Description

D The Nell IRF260 is a three-terminal silicon device with current conduction capability of 50A, fast switching speed, low on-state resistance, breakdown voltage rating of 200V, and max.

threshold voltage of 4 volts.

Key Features

  • RDS(ON) = 0.055Ω @ VGS = 10V Ultra low gate charge(230nC Max. ) Low reverse transfer capacitance (C RSS = 310pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature G (Gate) S (Source).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR IRF260 Series N-Channel Power MOSFET 50A, 200Volts RoHS RoHS Nell High Power Products DESCRIPTION D The Nell IRF260 is a three-terminal silicon device with current conduction capability of 50A, fast switching speed, low on-state resistance, breakdown voltage rating of 200V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control circuits, UPS and general purpose switching applications. G D S TO-3PB (IRF260B) D (Drain) G D S TO-247AB (IRF260C) FEATURES RDS(ON) = 0.055Ω @ VGS = 10V Ultra low gate charge(230nC Max.