Nell Power Semiconductor IRF260
IRF260 is a three-terminal silicon device with current conduction capability of 50A, fast switching speed, low on-state resistance, breakdown voltage rating of 200V, and max. They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control circuits, UPS and general purpose switching applications.| Part No. | IRF260 |
|---|---|
| Datasheet | IRF260 Download |
| Manufacturer |  Nell Power Semiconductor |
| Description | N-Channel Power MOSFET |
| Buy | Stock & Price |
DESCRIPTION
D The Nell threshold voltage of 4 volts. G D S TO-3PB (IRF260B) D (Drain) G D S TO-247AB (IRF260C)FEATURES
RDS(ON) = 0.055Ω @ VGS = 10V Ultra low gate charge(230nC Max.) Low reverse transfer capacitance (C RSS = 310pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature G (Gate) S (Source) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max. 50 200 0.055 @ V GS = 10V 230ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise specified) SYMBOL VDSS V DGR V GS ID I DM I AR E AR E AS dv/dt PD TJ T STG TL PARAMETER Drain to Source voltage Drain to Gate voltage Gate to Source voltage T C =25°C Continuous Drain Current (V GS =10V) TEST CONDITIONS T J =25°C to 150°C R GS =20KΩ VALUE 200 200 ±20 50 35 UNIT V T C =100°C A Pulsed Drain current(Note 1) Avalanche current(Note 1) Repetitive avalanche energy(Note 1) Single pulse avalanche energy(Note 2) Peak diode recovery dv/dt(Note 3) Total power dissipation Derate a...
