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NJG1802K51 - HIGH POWER SPDT SWITCH GaAs MMIC

Description

The NJG1802K51 is a GaAs SPDT switch MMIC suitable for LTE/UMTS/CDMA/GSM applications.

Features

  • very low insertion loss, high isolation and excellent linearity performance down to 1.8V control voltage at high frequency up to 2.7GHz. In addition, this switch is able to handle high power signals. For saving current consumption, the NJG1802K51 has a shutdown mode. The NJG1802K51 has ESD protection devices to achieve excellent ESD performances. No DC Blocking capacitors are required for all RF ports unless DC is biased externally. And the ultra small & ultra thin QFN12-51 package is adopted.

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Datasheet Details

Part number NJG1802K51
Manufacturer New Japan Radio
File Size 308.40 KB
Description HIGH POWER SPDT SWITCH GaAs MMIC
Datasheet download datasheet NJG1802K51 Datasheet
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NJG1802K51 HIGH POWER SPDT SWITCH GaAs MMIC I GENERAL DESCRIPTION The NJG1802K51 is a GaAs SPDT switch MMIC suitable for LTE/UMTS/CDMA/GSM applications. The NJG1802K51 features very low insertion loss, high isolation and excellent linearity performance down to 1.8V control voltage at high frequency up to 2.7GHz. In addition, this switch is able to handle high power signals. For saving current consumption, the NJG1802K51 has a shutdown mode. The NJG1802K51 has ESD protection devices to achieve excellent ESD performances. No DC Blocking capacitors are required for all RF ports unless DC is biased externally. And the ultra small & ultra thin QFN12-51 package is adopted.
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