2N2552 Datasheet | New Jersey Semi-Conductor

20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 2N1038, 2N1039- . ?N1040- 2N1041- 2N2552, 2N2553- , 2N2554, 2N2555- 2N2556,, 2N2557- , 2N2558, 2N2559- TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 A B C PNP GERMANIUM ALLOY JUNCTION POWER These hermetically sealed and dynamically tested units are designedto switch reactive and resistive loads at maximum efficiency by using a unique internal heat-sink design. Each unit can dissipate up to .4 watt in free air at 25°C and up to 1 watt in forced air at 25°C and can also be pressed into suitable heat-sink wells to dissipate up to 8 watts at 71°C. Typical applications include relay drivers, pulse amplifiers, audio amplifiers and high current switching circuits. The collector lead is internally connected to the case. MAXIMUM DESIGN LIMITS Collector-to-Base Voltage, Vci Collector-to-Emitter Voltage, VCE Acting Region Emitter Forward Biased Cutoff Region Emitter Reverse Biased Emitter-to-Base Voltage, Vf, Collector Current, Ic Base Current, l> Operating and Junction Temp. L Thermal Resistance, Junction to Free Air e JA Thermal Resistance, Junction to Case e JC 2N1038 2N2552 2N2556 -40 -30 - 40 2N1039 2N2553 2N2557 -60 2N1040 2N1041 2N2554 'MUSS 2N2551 2N3559 Unjts -80 -100 Volts -40 -60 -50 -80 -20 -3.0 -1.0 -55 to + 100 -60 -100 Volts Volts Volts Amp Amp °C °C/W °C/W CHARACTERISTICS Parameter Current Gain, mon Emitter Current Gain, mon Emitter Base-to-Emitter Voltage Base-to-Emitter Voltage AT 2i5 C CASE Symbol HFEI...