2N4100
FEATURES
- High Gain At Low Current E
- Low Output Capacitance C0uo<0.8p F
- hp£ Match hj
2N4O44, 2N4045, 2H41OO, 2N4878, 2N4879, 2N4880 Dual Monolithic Matched NPN Silicon Planar Transistors hp > 200 @ 10 /n A
CONFIGURATION
TO-71 TO-78
- Tight Vg£ Tracking A «v B E ,-v B _;
- Dietectrically isolated matched pairs for differential amplifiers.
ABSOLUTE MAXIMUM RATINGS ® 25"C (unless otherwise noted) Maximum Temperatures Storage Temperature -65°C to +200°C Operating Junction Temperature +200°C Maximum Power Dissipation
ONE SIDE Tout Dittip- lion it 25?C 03 Win C»M T- mc«flture Dfrtling Factor 1.7m W/- BOTH SIDES ONE SIDE BOTH SIDES 0.9 Wilt 2,9m VV/'C
- "
«,% C'
0.4 Wnt
2.3m W/°C
0.75 Wall 4.3m W/'C
CHIP TOPOGRAPHY 4000
2N4044 3N4100 2N4046 2N4878 2N4879 2N488O vcao vrso
~f
8AS£
VFO ceo 'e
«cior to 6»e Voltao- Co Kector to Emitter Voltage Emitter to Baw Voltage (Note 2) Collector to Collector Voltage Collector Current
60V 60 V 7V
100V 10,,-.A ssv
55V 7 V
100V 10m A
45V 45V 7V...
