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2SB1477 - Silicon PNP Power Transistor

Download the 2SB1477 datasheet PDF. This datasheet also covers the 2SB1477_NewJerseySemi variant, as both devices belong to the same silicon pnp power transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

Collector-Emitter Breakdown Voltage: V(BR)CEo=-100V(Min.) Wide Area of Safe Operation Complement to Type 2SD2236 -^ ^ j : j , ft 1 I 1 2 3 f C --

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SB1477_NewJerseySemi-Conductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SB1477
Manufacturer New Jersey Semi-Conductor
File Size 90.61 KB
Description Silicon PNP Power Transistor
Datasheet download datasheet 2SB1477 Datasheet

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Other Datasheets by New Jersey Semi-Conductor

Part Number Description
2SB1478 Silicon PNP Darlington Power Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
C/ 'j£ti£iJ ^zmi-Conductoi Lpioduati, One. U TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SB1477 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo=-100V(Min.) • Wide Area of Safe Operation • Complement to Type 2SD2236 • -^ ^ j : j , ft 1 I 1 2 3 f *• C •*••--• <"• 3 PIN 1.BASE 2. COLLECT OR 3. BETTER TO-247 package APPLICATIONS • Designed for driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT i > 0 * ; t fc ' ' : ' • ' ! i i ^L. i ^ ' i '• ' i • ! i —..