• Part: BF961
  • Description: N-Channel Dual Gate MOS-Fieldeffect Tetrode
  • Manufacturer: New Jersey Semi-Conductor
  • Size: 89.73 KB
Download BF961 Datasheet PDF
New Jersey Semi-Conductor
BF961
Features - Integrated gate protection diodes - High cross modulation performance - Low noise figure - High AGC-range - Low feedback capacitance - Low input capacitance -OD BF961 Marking: BF961 ^ Plastic case (TO 50) 1-Drain, 2=Source, 3=Gate 1, 4=Gate 2 -OS Absolute Maximum Ratings Tamb = 25°C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Channel temperature Storage temperature range Test Conditions Type Symbol Value Unit 30 m A ±|Q1/G2SM 10 m A Tamb<60'C Ptot 200 m W °C - ~~ ™» Tstg -55 to +150 °C Maximum Thermal Resistance Tamb = 25°C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35u.m...