Datasheet Details
| Part number | BF961 |
|---|---|
| Manufacturer | New Jersey Semi-Conductor |
| File Size | 89.73 KB |
| Description | N-Channel Dual Gate MOS-Fieldeffect Tetrode |
| Datasheet |
 BF961 Datasheet
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Key Features
- Integrated gate protection diodes.
- High cross modulation performance.
- Low noise figure.
- High AGC-range.
- Low feedback capacitance.
- Low input capacitance -OD BF961 Marking: BF961 ^ Plastic case (TO 50) 1-Drain, 2=Source, 3=Gate 1, 4=Gate 2 -OS Absolute Maximum Ratings Tamb = 25°C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Channel temperature.