BF961 - N-Channel Dual Gate MOS-Fieldeffect Tetrode

This page provides the datasheet information for the BF961, a member of the BF961-NewJerseySemi N-Channel Dual Gate MOS-Fieldeffect Tetrode family.

Datasheet Summary

Features

Integrated gate protection diodes.
High cross modulation performance.
Low noise figure.
High AGC-range.
Low feedback capacitance.
Low input capacitance -OD BF961 Marking: BF961 ^ Plastic case (TO 50) 1-Drain, 2=Source, 3=Gate 1, 4=Gate 2 -OS Absolute Maximum Ratings Tamb = 25°C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Total power dissipation Channel temperature.

New Jersey Semi-Conductor

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Datasheet Details

Part number	BF961
Manufacturer	New Jersey Semi-Conductor
File Size	89.73 KB
Description	N-Channel Dual Gate MOS-Fieldeffect Tetrode
Datasheet	BF961 Datasheet
Additional preview pages of the BF961 datasheet.

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Full PDF Text Transcription

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<£e.mi-Condu.cioi ZPioducti, fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. BF961 TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Applications Input- and mixer stages especially for FM- and VHP TV-tuners up to 300 MHz.

Published: Apr 1, 2024 |