NSD65R280C - N-channel 650V Super Junction MOSFET

Description

NSD65R280C is a N-channel power MOSFET designed according to super junction technology.

This device has very low on-resistance and hard ruggedness for switching applications.

It’s very low conduction loss and fast switching can make applications more efficient and faster.

Features

Low gate charge.
Low RDS(on) per chip area(Low FOM).
Very low switching and conduction loss.
Extremely high commutation ruggedness.

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NSD65R280C n-channel 650v super junction mosfet by Nexgen Power - Datasheet Preview

Datasheet Details

Part number	NSD65R280C
Manufacturer	Nexgen Power
File Size	752.72 KB
Description	N-channel 650V Super Junction MOSFET
Datasheet	NSD65R280C Datasheet

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NSD65R280C N-channel 650V Super Junction MOSFET Description NSD65R280C is a N-channel power MOSFET designed according to super junction technology. This device has very low on-resistance and hard ruggedness for switching applications. It’s very low conduction loss and fast switching can make applications more efficient and faster. Features • Low gate charge • Low RDS(on) per chip area(Low FOM) • Very low switching and conduction loss • Extremely high commutation ruggedness Applications • TV and PC Power • Adopter and Lighting • Telecom and UPS(Uninterruptible Power Supply) Key parameters Parameter VDS @ Tj,max Qg,typ ID RDS(on),max Value 700 23 13.8 0.

Published: Jan 11, 2025 |