NSD65R280C Overview
NSD65R280C is a N-channel power MOSFET designed according to super junction technology. This device has very low on-resistance and hard ruggedness for switching applications. It’s very low conduction loss and fast switching can make applications more efficient and faster.
NSD65R280C Key Features
- Low gate charge
- Low RDS(on) per chip area(Low FOM)
- Very low switching and conduction loss
- Extremely high mutation ruggedness