NSD65R280C Datasheet | Nexgen Power

Description NSD65R280C is a N-channel power MOSFET designed according to super junction technology. This device has very low on-resistance and hard ruggedness for switching applications. It’s very low conduction loss and fast switching can make applications more efficient and faster. Features - Low gate charge - Low RDS(on) per chip area(Low FOM) - Very low switching and conduction loss - Extremely high mutation ruggedness Applications - TV and PC Power - Adopter and Lighting - Tele and UPS(Uninterruptible Power Supply) Key parameters Parameter VDS @ Tj,max Qg,typ ID RDS(on),max Value 700 23 13.8 0.28 Unit V n C A Ω Package & Internal circuit Ordering Information Ordering Code NSD65R280C Package TO-252(DPAK) Marking 65R280C Packing type Tape & Reel Final Datasheet, Rev. 1.0, May. 2021 Nexgen Power Co., Ltd. MTRRJOPMTPONM e KOPMTPONMK Absolute maximum ratings at TC=25o C unless otherwise specified Symbol Parameter VDS Drain-source...