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11DQ09 - Low Forward Voltage drop Diode

Key Features

  • Miniature Size.
  • Low Forward Voltage drop.
  • Low Power Loss, High Efficiency.
  • High Surge Capability.
  • 30 Volts thru 100 Volts Types Available.
  • 52mm Inside Tape Spacing Package Available www. DataSheet4U. com Maximum Ratings Rating Symbol VRRM IO IF(RMS) IFSM Tjw Tstg Symbol IRM VFM 40 1.0 1.0 Approx Net Weight:0.32g 11DQ09 90 Ta=38°C.
  • Ta=80°C.
  • 50Hz Half Sine Wave Resistive Load Unit V A A A °C °C Unit mA V °C/W Repetitive Peak Reverse Voltage Without Fin or A.

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Datasheet Details

Part number 11DQ09
Manufacturer Nihon Inter Electronics Corporation
File Size 73.51 KB
Description Low Forward Voltage drop Diode
Datasheet download datasheet 11DQ09 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SBD Type :11DQ09 OUTLINE DRAWING OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Power Loss, High Efficiency * High Surge Capability * 30 Volts thru 100 Volts Types Available * 52mm Inside Tape Spacing Package Available www.DataSheet4U.com Maximum Ratings Rating Symbol VRRM IO IF(RMS) IFSM Tjw Tstg Symbol IRM VFM 40 1.0 1.0 Approx Net Weight:0.32g 11DQ09 90 Ta=38°C* Ta=80°C* 50Hz Half Sine Wave Resistive Load Unit V A A A °C °C Unit mA V °C/W Repetitive Peak Reverse Voltage Without Fin or Average Rectified P.C.Board Output Current P.C.Board mounted RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range 1.57 50Hz Half Sine Wave,1cycle, Non-repetitive - 40 to + 150 - 40 to + 150 Conditions Min. Typ. Max. 0.