PDMB50E6 datasheet by Nihon Inter Electronics Corporation.
| Part number | PDMB50E6 |
|---|---|
| Datasheet | PDMB50E6_NihonInterElectronicsCorporation.pdf |
| File Size | 268.64 KB |
| Manufacturer | Nihon Inter Electronics Corporation |
| Description | IGBT |
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－ － ２.１ － 2,500 ０.１５ ０.２５ ０.１０ ０.３５ Ｍａｘ. ２.４ ０.２５ Ｕｎｉｔ Ａ ＤＣ １ｍｓ Ｔｅｓｔ Ｃｏｎｄｉｔｉｏｎ ＩＦ= 50A,ＶＧＥ= 0V ＩＦ= 50A,ＶＧＥ= -10V ｄi/ｄt= 100A/μs Ｕｎｉｔ Ｖ μｓ □ 熱 的 特 性 ： ＴＨＥＲＭＡＬ ＣＨＡＲＡＣＴＥＲＩＳＴＩＣＳ Ｃｈａｒａｃｔｅｒｉｓｔｉｃ 熱 抵 抗 ＩＧＢＴ Ｔhermal Ｉmpedance Ｄiode Ｓｙｍｂｏｌ Ｒth(j-c) Ｔｅｓｔ Ｃｏｎｄｉｔｉｏｎ Junction to Case （Tc測定点チップ直下） Ｍｉｎ. Gate to Emitter Voltage (Typical) 16 14 12 10 8 6 4 2 0 Fig.4- Collector to Emitter On Voltage vs.
View all Nihon Inter Electronics Corporation datasheets
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|---|---|
| PDMB50A6 | IGBT |
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| PDMB100B12C2 | IGBT |
| PDMB100BS12 | IGBT |
| PDMB100BS12C | IGBT |
| PDMB100E6 | IGBT |
| PDMB150A6 | IGBT |
