PDMB600BS12 Overview
- - 2.3 - 37,800 0.25 0.40 0.25 0.80 Max. 2.6 0.3 Unit A DC 1ms Test Condition IF= 600A,VGE= 0V IF= 600A,VGE= -10V di/dt= 1200A/μs Unit V μs □ 熱 的 特 性 : THERMAL CHARACTERISTICS Characteristic 熱 抵 抗 IGBT Thermal Impedance Diode Symbol Rth(j-c) Test Condition Junction to Case Min. Gate to Emitter Voltage (Typical) 16 Fig.4- Collector to Emitter On Voltage vs.