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10EDB10 - DIODE

Features

  • Type : 10EDB10 1A 100V Tj =150 °C.

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Datasheet Details

Part number 10EDB10
Manufacturer Nihon Inter Electronics
File Size 62.33 KB
Description DIODE
Datasheet download datasheet 10EDB10 Datasheet
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www.DataSheet4U.com DIODE FEATURES Type : 10EDB10 1A 100V Tj =150 °C OUTLINE DRAWING * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 26mm and 52mm Inside Tape Spacing Package Available Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Symbol VRRM IO IF(RMS) IFSM Tjw Tstg Approx Net Weight:0.17g 10EDB10 100 50Hz Half Sine Wave Resistive Load Ta=39°C *1 Ta=26°C *2 1.0 0.9 1.57 50Hz Half Sine Wave,1cycle, Non-repetitive - 40 to + 150 - 40 to + 150 45 Unit V A A A °C °C Electrical • Thermal Characteristics Characteristics Peak Reverse Current Peak Forward Voltage Symbol IRM VFM Conditions Min.
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