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11EQS04 - Low Forward Voltage Drop Diode

Key Features

  • Miniature Size.
  • Low Forward Voltage Drop.
  • High Surge Capability.
  • 30volts trough 100volts Types Available.
  • 26mm and 52mm Inside Tape Spacing Package Available.

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Other Datasheets by Nihon Inter Electronics

Part Number Description
11EQS03L Low Forward Voltage drop Diode
11EQS06 Low Forward Voltage drop Diode
11EQS09 Schottky Barrier Diode
11EQS10 Low Forward Voltage drop Diode
11EQ04 Schottky Barrier Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SBD Type :11EQS04 FEATURES * Miniature Size * Low Forward Voltage Drop * High Surge Capability * 30volts trough 100volts Types Available * 26mm and 52mm Inside Tape Spacing Package Available OUTLINE DRAWING Maximum Ratings Approx Net Weight:0.17g Rating Symbol 11EQS04 Unit Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage Without Fin or Average Rectified P.C.Board Output Current P.C.Board Mounted * RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range VRRM VRSM IO IF(RMS) IFSM Tjw Tstg 40 V 45 V 1.0 Ta=25°C Half Sine Wave Resistive Load 1.0 Ta=48°C A 1.