Datasheet4U Logo Datasheet4U.com

C30T10Q - SBD

Features

  • SQUARE-PAK TO-263AB(SMD) Packaged in 24mm Tape and Reel.
  • Dual Diodes.
  • Cathode Common.
  • Low Forward Voltage Drop.
  • High Surge Capability.
  • Tj=150 °C operation.

📥 Download Datasheet

Datasheet preview – C30T10Q

Datasheet Details

Part number C30T10Q
Manufacturer Nihon Inter Electronics
File Size 52.11 KB
Description SBD
Datasheet download datasheet C30T10Q Datasheet
Additional preview pages of the C30T10Q datasheet.

📁 Similar Datasheet

  • C30T10Q-11A - Schottky Barrier Diode (Kyocera)
  • C30T03QLH - Schottky Barrier Diode (Kyocera)
  • C30T03QLH-11A - Schottky Barrier Diode (Kyocera)
  • C30T04Q - Schottky Barrier Diode (Kyocera)
  • C30T04Q-11A - Schottky Barrier Diode (Kyocera)
  • C30T04QH - Schottky Barrier Diode (Kyocera)
  • C30T04QH-11A - Schottky Barrier Diode (Kyocera)
  • C30T06Q - Schottky Barrier Diode (Kyocera)
  • C30T06QH-11A - Schottky Barrier Diode (Kyocera)
  • C300 - MONOLITHIC WIDEBAND CRT DISTORTION CORRECTION DEVICE (Intronice)
Other Datasheets by Nihon Inter Electronics

Full PDF Text Transcription

Click to expand full text
S B D T y p e : C30T10Q FEATURES *SQUARE-PAK TO-263AB(SMD) Packaged in 24mm Tape and Reel *Dual Diodes – Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 °C operation OUTLINE DRAWING Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Symbol VRRM IO IF(RMS) IFSM Tjw Tstg Approx Net Weight: 1.4g C30T10Q 100 30 Tc=105°C 50 Hz Full Sine Wave Resistive Load 33.
Published: |