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FCH08A10 - Schottky Barrier Diode

Key Features

  • Similar to TO-220AB Case.
  • Fully Molded Isolation.
  • Dual Diodes.
  • Cathode Common.
  • Low Forward Voltage Drop.
  • Low Power Loss,High Efficiency.
  • High Surge Capability.
  • Tj=150 °C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Mounting torque Approx Net Weight: 1.75g Symbol VRRM IO IF(RMS) IFSM Tjw Tstg Ftor 100.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr SBD T y p e : FCH08A10 FCH08A10 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Mounting torque Approx Net Weight: 1.75g Symbol VRRM IO IF(RMS) IFSM Tjw Tstg Ftor 100 8 FCH08A10 100 50 Hz Full Sine Wave Tc=127°C Resistive Load 8.89 50Hz Full Sine Wave ,1cycle Non-repetitive -40 to +150 -40 to +150 recommended torque = 0.