Datasheet4U Logo Datasheet4U.com

FCH10A15 - SBD

Key Features

  • Similar to TO-220AB Case.
  • Fully Molded Isolation.
  • Dual Diodes.
  • Cathode Common.
  • Low Forward Voltage Drop.
  • Low Power Loss,High Efficiency.
  • High Surge Capability.
  • Tj=150 °C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Mounting torque Symbol VRRM IO IF(RMS) IFSM Tjw Tstg Ftor Approx Net Weight: 1.75g FCH1.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FCH10A15 Schottky Barrier Diode Kyocera
FCH10A15 Dual Common Cathode Schottky Barrier Rectifier Thinki Semiconductor
FCH10A10 Schottky Barrier Diode Kyocera
FCH10A10 Dual Common Cathode Schottky Barrier Rectifier Thinki Semiconductor
FCH10A03L Schottky Barrier Diode Kyocera

Other Datasheets by Nihon Inter Electronics

Part Number Description
FCH10A10 Schottky Barrier Diode
FCH10A03L Schottky Barrier Diode
FCH10A04 Schottky Barrier Diode
FCH10A20 Schottky Barrier Diode
FCH10U06 Schottky Barrier Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
S B D T y p e : FCH10A15 OUTLINE DRAWING FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Mounting torque Symbol VRRM IO IF(RMS) IFSM Tjw Tstg Ftor Approx Net Weight: 1.75g FCH10A15 Unit 150 10 Tc=121°C 50 Hz Full Sine Wave Resistive Load V A 11.1 A 130 50Hz Full Sine Wave ,1cycle Non-repetitive -40 to +150 -40 to +150 recommended torque = 0.