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FCQ10A04 - SBD

Key Features

  • Similar to TO-220AB Case.
  • Fully Molded Isolation.
  • Dual Diodes.
  • Cathode Common.
  • Low Forward Voltage Drop.
  • Low Power Loss,High Efficiency.
  • High Surge Capability.
  • Tj=150 °C operation.
  • Wire-Bonded technology.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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S B D T y p e : FCQ10A04 FEATURES *Similar to TO-220AB Case *Fully Molded Isolation *Dual Diodes – Cathode Common *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation *Wire-Bonded technology OUTLINE DRAWING Maximum Ratings Rating Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Mounting torque Symbol VRRM VRSM IO IF(RMS) IFSM Tjw Tstg Ftor Approx Net Weight: 1.75g FCQ10A04 Unit 40 45 10 Tc=116°C 50 Hz Full Sine Wave Resistive Load V V A 11.1 A 120 50Hz Full Sine Wave ,1cycle Non-repetitive -40 to +150 -40 to +150 recommended torque = 0.