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FSQ10A04 - Schottky Barrier Diode

Key Features

  • Similar to TO-220AC Case.
  • Fully Molded Isolation.
  • Low Forward Voltage Drop.
  • Low Power Loss,High Efficiency.
  • High Surge Capability.
  • Tj=150 °C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Mounting torque Approx Net Weight: 1.7g Symbol VRRM VRSM IO IF(RMS) IFSM Tjw Tstg Ftor 180 10.

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Other Datasheets by Nihon Inter Electronics

Part Number Description
FSQ10A04B Schottky Barrier Diode
FSQ10A06 SBD
FSQ10A06B Schottky Barrier Diode
FSQ05A03L SBD
FSQ05A04 SBD

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SBD T y p e : FSQ10 FSQ10A0 Q10A04 A04 OULINE DRAWING FEATURES *Similar to TO-220AC Case *Fully Molded Isolation *Low Forward Voltage Drop *Low Power Loss,High Efficiency *High Surge Capability *Tj=150 °C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Mounting torque Approx Net Weight: 1.7g Symbol VRRM VRSM IO IF(RMS) IFSM Tjw Tstg Ftor 180 10 FSQ10A04 40 45 50 Hz half Sine Wave Tc=119°C Resistive Load 15.7 50Hz Half Sine Wave ,1cycle Non-repetitive -40 to +150 -40 to +150 recommended torque = 0.