PBMB75A6 Datasheet | Nihon Inter Electronics

IGBT MODULE CIRCUIT H-Bridge 75A 600V OUTLINE DRAWING .. 8- fasten- tab No 110 Dimension(mm) Approximate Weight : 430g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage Collector Current DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg VISO FTOR 600 +/ - 20 75 150 320 -40 to +150 -40 to +125 2500 2 Unit V V A W °C °C V N- m Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff Test Condition VCE=600V,VGE=0V VGE=+/- 20V,VCE=0V IC=75A,VGE=15V VCE=5V,IC=75m A VCE=10V,VGE=0V,f=1MHz VCC= 300V RL= 4 ohm RG= 10 ohm VGE= +/- 15V Min. - Typ. 2.1 7,500 0.15 0.25 0.2 0.45 Max. 1.0 1.0 2.6 8.0 0.3 0.4 0.35 0.7 Unit m A µA V V p F µs FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Forward Current DC 1 ms IF IFM 75 150 Unit A Typ. 1.9 0.15 Characteristic Peak Forward Voltage Reverse Recovery Time Symbol VF trr Test...