PCHMB75B12A Overview
- - 1.9 - 6,300 0.25 0.40 0.25 0.80 Max. 2.4 0.3 Unit A DC 1ms Test Condition IF= 75A,VGE= 0V IF= 75A,VGE= -10V di/dt= 150A/μs Unit V μs : THERMAL CHARACTERISTICS Symbol Rth(j-c) Test Condition Junction to Case Min. 0.3 0.6 Unit ℃/W Characteristic 熱 抵 抗 IGBT Thermal Impedance Diode 日本インター株式会社 PCHMB75B12A Fig.2- Collector to Emitter On Voltage vs.