Datasheet Summary
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MOSFET MODULE
Features
- Trench Gate MOS FET Module
Single 560A /150V
OUTLINE DRAWING
- Super Low Rds(ON) 2 milliohms( @560A )
- With Fast Recovery Source-Drain Diode
Circuit
TYPICAL APPLICATIONS
- Chopper Control For FORKLIFTs
MAXMUM RATINGS Ratings
Drain-Source Voltage (VGS=0V) Gate
- Source Voltage Continuous Drain Current Duty=50% D.C.
Approximate Weight : 650g
Symbol
VDSS VGSS ID IDM PD Tjw Tstg VISO FTOR M4 M8
150 +/
- 20 560 (Tc=25°C) 440 (Tc=25°C) 1,120 Tc=25°C) 1,780 Tc=25°C) -40 to +150 -40 to +125 2,500 3.0 1.4 10.5
Unit
N- m
ELECTRICAL CHARACTERISTICS (@Tc=25°C unless otherwise noted) Characteristic Symbol Test...