PRHMB200B12 Overview
- - 1.9 - 16,600 0.25 0.40 0.25 0.80 Max. 2.4 0.3 Unit A DC 1ms Unit V μs : THERMAL CHARACTERISTICS Symbol Rth(j-c) Test Condition Junction to Case Min. Unit 0.125 ℃/W 0.24 Characteristic 熱 抵 抗 IGBT Thermal Impedance Diode 日本インター株式会社 Datasheet pdf - http://..net/ .DataSheet.co.kr PRHMB200B12 Fig.1- Output Characteristics (Typical) 400 Fig.2- Collector to Emitter On Voltage vs.