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903BDG - P0903BDG

Download the 903BDG datasheet PDF. This datasheet also covers the 903BDG_Niko variant, as both devices belong to the same p0903bdg family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (903BDG_Niko-Sem.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P0903BDG TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 9.5m ID 50A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Repetitive Avalanche Energy Power Dissipation 2 1 www.DataSheet4U.com SYMBOL VGS LIMITS ±20 50 35 200 40 250 8.6 50 30 -55 to 150 275 UNITS V TC = 25 °C TC = 100 °C ID IDM IAR A L = 0.1mH L = 0.05mH TC = 25 °C TC = 100 °C EAS EAR PD Tj, Tstg TL mJ W Operating Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.