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P50N03LDG - N-Channel Logic Level Enhancement Mode Field Effect Transistor

This page provides the datasheet information for the P50N03LDG, a member of the P50N03LDG-Niko N-Channel Logic Level Enhancement Mode Field Effect Transistor family.

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Datasheet Details

Part number P50N03LDG
Manufacturer Niko-Sem
File Size 304.73 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
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NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P50N03LDG TO-252 (DPAK) Lead-Free D PRODUCT SUMMARY V(BR)DSS 27 RDS(ON) 12m ID 50A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Repetitive Avalanche Energy Power Dissipation 2 1 SYMBOL VGS LIMITS ±20 50 35 150 33 250 8.6 50 30 -55 to 150 275 UNITS V TC = 25 °C TC = 100 °C ID IDM IAR A L = 0.1mH L = 0.05mH TC = 25 °C TC = 100 °C EAS EAR PD Tj, Tstg TL mJ W Operating Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.
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