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PE610SA - N-Channel FET

Download the PE610SA datasheet PDF. This datasheet also covers the PE610SA-Niko variant, as both devices belong to the same n-channel fet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Pb.
  • Free, Halogen Free and RoHS compliant.
  • Low RDS(on) to Minimize Conduction Losses.
  • Ohmic Region Good RDS(on) Ratio.
  • Optimized Gate Charge to Minimize Switching Losses.
  • Products Integrated Schottky Diode.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PE610SA-Niko-Sem.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by NIKO-SEM

Part Number Description
PE606BA N-Channel Enhancement Mode Field Effect Transistor
PE636BA N-Channel Field Effect Transistor
PE6R8DX Dual N-Channel Enhancement Mode Field Effect Transistor
PE6W2EA N-Channel Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NIKO-SEM N-Channel Enhancement Mode PE610SA Field Effect Transistor PDFN 3x3P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 3mΩ ID 62A Features • Pb−Free, Halogen Free and RoHS compliant. • Low RDS(on) to Minimize Conduction Losses. • Ohmic Region Good RDS(on) Ratio. • Optimized Gate Charge to Minimize Switching Losses. • Products Integrated Schottky Diode. Applications • Protection Circuits Applications. • Computer for DC to DC Converters Applications.