Datasheet4U Logo Datasheet4U.com

P2003BVG - N-Channel Enhancement Mode Field Effect Transistor

📥 Download Datasheet

Datasheet Details

Part number P2003BVG
Manufacturer Niko
File Size 283.21 KB
Description N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet P2003BVG Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NIKO-SEM N-Channel Enhancement Mode Field Effect Transistor P2003BVG SOP-8 Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 30 20m ID 8A D G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 70 °C Power Dissipation TC = 25 °C TC = 70 °C Junction & Storage Temperature Range Lead Temperature (1/16” from case for 10 sec.) VDS VGS ID IDM PD Tj, Tstg TL THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL Junction-to-Ambient RθJA 1Pulse width limited by maximum junction temperature. 2Duty cycle ≤ 1% TYPICAL G : GATE D : DRAIN S : SOURCE LIMITS 30 ±20 8 6 32 2.5 1.