The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
NIKO-SEM
www.DataSheet4U.com
N-Channel Logic Level Enhancement Mode Field Effect Transistor
P55N02LD
TO-252 (DPAK)
D
PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 10mΩ ID 55A 1. GATE 2. DRAIN 3. SOURCE
G S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Repetitive Avalanche Energy Power Dissipation
2 1
SYMBOL VGS
LIMITS ±20 55 36 140 20 140 5.6 60 38 -55 to 150 275
UNITS V
TC = 25 °C TC = 100 °C
ID IDM IAR
A
L = 0.1mH L = 0.05mH TC = 25 °C TC = 100 °C
EAS EAR PD Tj, Tstg TL
mJ
W
Operating Junction & Storage Temperature Range Lead Temperature ( /16” from case for 10 sec.
P55N02LD Datasheet
