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NJG1809ME7 - HIGH POWER SP4T SWITCH GaAs MMIC

Description

LTE-U / LAA, WLAN, and LTE applications.

Features

  • S.
  • Low voltage logic control 1.35 to 5.0V.
  • Low insertion loss 0.40dB typ. @f=2.7GHz, 3.5GHz, PIN=+27dBm 0.50dB typ. @f=5.85GHz, PIN=+27dBm.
  • High isolation 27dB typ. @f=2.7GHz, PIN=+27dBm 25dB typ. @f=3.5GHz, PIN=+27dBm 30dB typ. @f= 5.85GHz, PIN=+27dBm.
  • P-0.1dB +32dBm min.
  • High speed switching time 250ns typ.
  • Small and thin package EQFN18-E7 (2.0x2.0x0.397mm typ. ).
  • RoHS compliant and Halogen Free, MSL1.
  • PIN.

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Datasheet preview – NJG1809ME7

Datasheet Details

Part number NJG1809ME7
Manufacturer Nisshinbo
File Size 937.38 KB
Description HIGH POWER SP4T SWITCH GaAs MMIC
Datasheet download datasheet NJG1809ME7 Datasheet
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Full PDF Text Transcription

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NJG1809ME7 HIGH POWER SP4T SWITCH GaAs MMIC  GENERAL DESCRIPTION The NJG1809ME7 is a high power SP4T switch MMIC suitable for LTE-U / LAA, WLAN, and LTE applications. This switch features very low insertion loss and high isolation up to 6GHz and excellent linearity performance with 1.8V control voltage. This switch achieves high speed switching time for WLAN application. Integrated ESD protection device on each port achieves excellent ESD robustness. No DC Blocking capacitors are required for all RF ports unless DC is biased externally. The small and thin EQFN18-E7 package is adopted.  PACKAGE OUTLINE NJG1809ME7  APPLICATIONS LTE-U / LAA, WLAN (802.11a/b/g/n/ac), LTE multi-mode applications General purpose switching applications  FEATURES  Low voltage logic control 1.35 to 5.
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