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NJG1812AMET-A - HIGH POWER DPDT SWITCH GaAs MMIC

Description

The NJG1812AMET-A is a GaAs DPDT switch MMIC suitable for antenna swapping of LTE/UMTS/CDMA/GSM applications.

Features

  • S.
  • AEC-Q100 grade 2 qualified.
  • Low voltage operation VDD = 2.7 V typ.
  • Logic control voltage VCTL(H) = 1.35 to 5.0 V.
  • Low insertion loss 0.25 dB typ. @ f = 900 MHz, PIN = +35 dBm 0.35 dB typ. @ f = 1900 MHz, PIN = +33 dBm 0.45 dB typ. @ f = 2700 MHz, PIN = +27 dBm.
  • Low harmonics 2fo = -89 dBm typ. @ f = 786.5 MHz, PIN = +23 dBm 3fo = -89 dBm typ. @ f = 710 MHz, PIN = +23 dBm.
  • High power handling P-0.1dB = +36 dBm min.
  • Package with wettable flank EQFN12-ET (2.0.

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Datasheet preview – NJG1812AMET-A

Datasheet Details

Part number NJG1812AMET-A
Manufacturer Nisshinbo
File Size 1.24 MB
Description HIGH POWER DPDT SWITCH GaAs MMIC
Datasheet download datasheet NJG1812AMET-A Datasheet
Additional preview pages of the NJG1812AMET-A datasheet.

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Full PDF Text Transcription

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Automotive NJG1812AMET-A HIGH POWER DPDT SWITCH GaAs MMIC ■ FEATURES ● AEC-Q100 grade 2 qualified ● Low voltage operation VDD = 2.7 V typ. ● Logic control voltage VCTL(H) = 1.35 to 5.0 V ● Low insertion loss 0.25 dB typ. @ f = 900 MHz, PIN = +35 dBm 0.35 dB typ. @ f = 1900 MHz, PIN = +33 dBm 0.45 dB typ. @ f = 2700 MHz, PIN = +27 dBm ● Low harmonics 2fo = -89 dBm typ. @ f = 786.5 MHz, PIN = +23 dBm 3fo = -89 dBm typ. @ f = 710 MHz, PIN = +23 dBm ● High power handling P-0.1dB = +36 dBm min. ● Package with wettable flank EQFN12-ET (2.0 x 2.0 x 0.78 mm typ., pin pitch 0.
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