• Part: NJG1812AMET-A
  • Description: HIGH POWER DPDT SWITCH GaAs MMIC
  • Manufacturer: Nisshinbo
  • Size: 1.24 MB
Download NJG1812AMET-A Datasheet PDF
Nisshinbo
NJG1812AMET-A
FEATURES - AEC-Q100 grade 2 qualified - Low voltage operation VDD = 2.7 V typ. - Logic control voltage VCTL(H) = 1.35 to 5.0 V - Low insertion loss 0.25 d B typ. @ f = 900 MHz, PIN = +35 d Bm 0.35 d B typ. @ f = 1900 MHz, PIN = +33 d Bm 0.45 d B typ. @ f = 2700 MHz, PIN = +27 d Bm - Low harmonics 2fo = -89 d Bm typ. @ f = 786.5 MHz, PIN = +23 d Bm 3fo = -89 d Bm typ. @ f = 710 MHz, PIN = +23 d Bm - High power handling P-0.1d B = +36 d Bm min. - Package with wettable flank EQFN12-ET (2.0 x 2.0 x 0.78 mm typ., pin pitch 0.5 mm) - Ro HS pliant and Halogen Free, MSL1 - APPLICATION - e Call - Telematics - Antenna swapping, general purpose switching applications - LTE, UMTS, CDMA, GSM systems - BLOCK DIAGRAM (EQFN12-ET) (TOP VIEW) 1PIN INDEX GND P3 NC (GND) VDD 1 9 P4 DECODER GND 2 8 NC (GND) VCTL 3 7 P1 P2 - GENERAL DESCRIPTION The NJG1812AMET-A is a Ga As DPDT switch MMIC suitable for antenna swapping of LTE/UMTS/CDMA/GSM applications. This switch features...