• Part: NT1819NAAE2S
  • Description: Absorptive High Isolation SPDT Switch
  • Manufacturer: Nisshinbo
  • Size: 1.56 MB
Download NT1819NAAE2S Datasheet PDF
Nisshinbo
NT1819NAAE2S
FEATURES - Operation voltage: 3.3 V typ. (2.5 to 5.0 V) - Low control voltage: 1.8 V typ. - Low insertion loss: 0.70/0.80/0.85/0.90/1.2 d B typ. @0.7/3.85/4.7/6.0/7.125 GHz - High isolation: 70/62/60/55/51 d B typ. @0.7/3.85/4.7/6.0/7.125 GHz, PC-P1/P2 70/61/60/58/55 d B typ. @0.7/3.85/4.7/6.0/7.125 GHz, P1-P2 - High linearity: P-0.1d B = +31 d Bm typ. - Switching time: 250 ns typ. - Small package: 3.0 x 3.0 mm typ. - Frequency range: 0.2 to 7.125 GHz - Operation current: 200 A typ. - No DC blocking capacitor requirement unless external DC bias - Ro HS pliant, Halogen free, MSL1 APPLICATIONS - Cellular base transceiver station (small/macro cell, etc.) - Other wireless munication applications GENERAL DESCRIPTION The NT1819NAAE2S is an absorptive high isolation SPDT switch suitable for 5G cellular infrastructure and so on. This switch features high isolation characteristics between RF terminals and achieves 60 d B isolation at 3.85 GHz and 50 d B isolation at 7.125...