Datasheet4U Logo Datasheet4U.com

M25P128 - serial flash memory

General Description

.

.

.

.

.

.

Key Features

  • 128-Mbit flash memory.
  • 2.7 to 3.6 V single supply voltage.
  • SPI bus compatible serial interface.
  • 54 MHz clock rate (maximum) for 65 nm devices.
  • VPP = 9 V for fast program/erase mode (optional).
  • Page program (up to 256 Bytes):.
  • in 0.5 ms (typical) for 65 nm devices.
  • in 0.4 ms (typical with VPP = 9 V) for 65 nm devices.
  • Sector erase (2 Mbit).
  • Bulk erase (128 Mbit).
  • Electronic signature.
  • JEDE.

📥 Download Datasheet

Datasheet Details

Part number M25P128
Manufacturer Numonyx
File Size 610.94 KB
Description serial flash memory
Datasheet download datasheet M25P128 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
M25P128 128 Mbit (Multilevel) Low Voltage Serial Flash Memory ST Microelectronics
M25P10 1 Mbit Low Voltage Paged Flash Memory With 20 MHz Serial SPI Bus Interface STMicroelectronics
M25P10-A 1 Mbit/ Low Voltage/ Serial Flash Memory With 25 MHz SPI Bus Interface STMicroelectronics
M25P10A 1Mb 3V Serial Flash Embedded Memory Micron
M25P16 16-Mbit Low Voltage Serial Flash Memory STMicroelectronics

Other Datasheets by Numonyx

Part Number Description
M25P16 Flash Memory
M25P05-A 512 Kbits of flash memory
M25P32 serial Flash memory
M25PE80 page-erasable serial flash memory
M25PX16 16-Mbit dual I/O 4-Kbyte subsector erase / serial Flash memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
M25P128 128-Mbit, low-voltage, serial flash memory with 54-MHz SPI bus interface Features „ 128-Mbit flash memory „ 2.7 to 3.6 V single supply voltage „ SPI bus compatible serial interface „ 54 MHz clock rate (maximum) for 65 nm devices „ VPP = 9 V for fast program/erase mode (optional) „ Page program (up to 256 Bytes): – in 0.5 ms (typical) for 65 nm devices – in 0.4 ms (typical with VPP = 9 V) for 65 nm devices „ Sector erase (2 Mbit) „ Bulk erase (128 Mbit) „ Electronic signature – JEDEC standard two-byte signature (2018h) „ More than 10,000 erase/program cycles per sector „ More than 20-year data retention „ RoHS compliant packages SO16 (MF) 300 mils width VDFPN8 (ME) 8 x 6 mm (MLP8) March 2010 Rev 6 1/47 www.numonyx.com 1 Contents M25P128 Contents 1 2 Description . . . . . . . .