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M58BW016DB Datasheet 16 Mbit 3v Supply Flash Memories

Manufacturer: Numonyx

Overview: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash.

Datasheet Details

Part number M58BW016DB
Manufacturer Numonyx
File Size 0.97 MB
Description 16 Mbit 3V supply Flash memories
Datasheet M58BW016DB-Numonyx.pdf

Key Features

  • Supply voltage.
  • VDD = 2.7 V to 3.6 V for program, erase and read.
  • VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers.
  • VPP = 12 V for fast program (optional) High performance.
  • Access times: 70, 80 ns.
  • 56 MHz effective zero wait-state burst read.
  • Synchronous burst read.
  • Asynchronous page read Hardware block protection.
  • WP pin for write protect of the 2 outermost parameter blocks and all main blocks.
  • RP pin for write prote.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
ST Microelectronics Logo M58BW016DB 16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories ST Microelectronics
ST Microelectronics Logo M58BW016DT 16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories ST Microelectronics
ST Microelectronics Logo M58BW016BB 16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories ST Microelectronics
ST Microelectronics Logo M58BW016BT 16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories ST Microelectronics

More Datasheets from Numonyx

Part Number Description
M58BW016DT 16 Mbit 3V supply Flash memories
M58BW016FB 16 Mbit 3V supply Flash memories
M58BW016FT 16 Mbit 3V supply Flash memories
M58LR128KB (M58LRxxxKx) 128 or 256 Mbit 1.8 V supply Flash memories
M58LR128KT (M58LRxxxKx) 128 or 256 Mbit 1.8 V supply Flash memories
M58LR256KB (M58LRxxxKx) 128 or 256 Mbit 1.8 V supply Flash memories
M58LR256KT (M58LRxxxKx) 128 or 256 Mbit 1.8 V supply Flash memories

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