M58BW016DB Datasheet PDF

FEATURES

Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional) High performance – Access times: 70, 80 ns – 56 MHz effective zero wait-state burst read – Synchronous burst read – Asynchronous page read Hardware block protection – WP pin for write protect of the 2 outermost parameter blocks and all main blocks – RP pin for write protect of all blocks Optimized for FDI drivers – Fast program / erase suspend latency time < 6 µs – Common Flash interface Memory blocks – 8 parameters blocks (top or bottom) – 31 main blocks Low power consumption – 5 µA typical deep power-down – 60 µA typical standby for M58BW016DT/B 150 µA typical standby for M58BW016FT/B – Automatic standby after asynchronous read Electronic signature – Manufacturer code: 20h