Numonyx NAND01G-B2B
NAND flash memory
FEATURES
● High density NAND flash memories – Up to 2 Gbits of memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities Supply voltage: 1.8 V/3.0 V Page size – x8 device: (2048 + 64 spare) bytes – x16 device: (1024 + 32 spare) words Block size – x8 device: (128 K + 4 K spare) bytes – x16 device: (64 K + 2 K spare) words Page read/program – Random access: 25 µs (max) – Sequential access: 30 ns (min) – Page program time: 200 µs (typ) Copy back program mode Cache program and cache read modes Fast block erase: 2 ms (typ) Status register Electronic signature Chip enable ‘don’t care’●
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● TSOP48 12 x 20 mm FBGA
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● VFBGA63 9.5 x 12 x 1 mm VFBGA63 9 x 11 x 1 mm
● Serial number option Data protection – Hardware block locking – Hardware program/erase locked during power transitions Data integrity – 100 000 program/erase cycles per block (with ECC) – 10 years data retention...