Numonyx NAND512R4A2C
NAND Flash Memories
| Part No. | NAND512R4A2C |
|---|---|
| Datasheet | NAND512R4A2C Download |
| Manufacturer |  Numonyx |
| Description | NAND Flash Memories |
| Buy | Stock & Price |
FEATURES
● High density NAND Flash memories – – 512 Mbit memory array Cost effective solutions for mass storage applications x 8 or x 16 bus width Multiplexed Address/ Data FBGA● NAND interface – – TSOP48 12 x 20 mm
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● Supply voltage: 1.8 V, 3.0 V Page size – – x 8 device: (512 + 16 spare) bytes x 16 device: (256 + 8 spare) words x 8 device: (16 K + 512 spare) bytes x 16 device: (8 K + 256 spare) words Random access: 12 µs (3 V)/15 µs (1.8 V) (max) Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min) Page Program time: 200 µs (typ)
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● Block size – – VFBGA55 8 x 10 x 1 mm VFBGA63 9 x 11 x 1 mm Hardware Data Protection – Program/Erase locked during Power transitions 100,000 Program/Erase cycles (with ECC) 10 years Data Retention
● Page Read/Program – – –
● Data integrity – –
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● Copy Back Program mode Fast Block Erase: 2 ms (typ) Status Register Electronic signature Chip Enable ‘don’t care’ Serial Number option Device summary Reference ECOPACK® packages Development tools – – – Error Correction Code models Bad Blocks Management and Wear Leveling algorithms Hardware simulation models Table 1.
