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NAND512R4A2S - NAND SLC small page 70 nm Discrete

Download the NAND512R4A2S datasheet PDF. This datasheet also covers the NAND512W3A2S variant, as both devices belong to the same nand slc small page 70 nm discrete family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Density.
  • 512 Mbit: 4096 blocks.
  • NAND Flash interface.
  • x8 or x16 bus width.
  • Multiplexed address/data.
  • Memory configuration.
  • Page size: x8 device: (512 + 16 spare) Bytes x16 device: (256 + 8 spare) Words.
  • Block size: x8 device: (16K + 512 spare) Bytes x16 device: (8K + 256 spare) Words.
  • Supply voltage: 1.8 V, 3 V.
  • Read/write performance.
  • Random access: 12 µs (3 V)/15 µs(1.8 V) (max).
  • Sequential access: 30 ns (.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NAND512W3A2S-Numonyx.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NAND512R4A2S
Manufacturer Numonyx
File Size 710.02 KB
Description NAND SLC small page 70 nm Discrete
Datasheet download datasheet NAND512R4A2S Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NAND512R4A2C (NAND512xxA2C) NAND Flash Memories STMicroelectronics
NAND512R3A2C (NAND512xxA2C) NAND Flash Memories STMicroelectronics
NAND512-A 128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories STMicroelectronics
NAND512-B NAND Flash Memory STMicroelectronics
NAND512-M (NANDxxx-M) NAND Flash Memories ST Microelectronics

Other Datasheets by Numonyx

Part Number Description
NAND512R4A2C NAND Flash Memories
NAND512R4A2D SLC NAND flash memories
NAND512R3A2C NAND Flash Memories
NAND512R3A2D SLC NAND flash memories
NAND512R3A2S NAND SLC small page 70 nm Discrete

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Numonyx® NAND SLC small page 70 nm Discrete 512 Mbit, 528 Byte/264 Word page, x8/x16, 1.8 V/3 V Features  Density – 512 Mbit: 4096 blocks  NAND Flash interface – x8 or x16 bus width – Multiplexed address/data  Memory configuration – Page size: x8 device: (512 + 16 spare) Bytes x16 device: (256 + 8 spare) Words – Block size: x8 device: (16K + 512 spare) Bytes x16 device: (8K + 256 spare) Words  Supply voltage: 1.8 V, 3 V  Read/write performance – Random access: 12 µs (3 V)/15 µs(1.8 V) (max) – Sequential access: 30 ns (3 V)/50 ns (1.8 V)(min) – Page program time: 200 µs (typ) – Block erase time: 2 ms (typ) – Programming performance (typ): x8 device: 2.3 MByte/s x16 device: 2.