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NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C
512 Mbit, 528 byte/264 word page, 1.8 V/3 V, NAND Flash memories
Features
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High density NAND Flash memories – – 512 Mbit memory array Cost effective solutions for mass storage applications x 8 or x 16 bus width Multiplexed Address/ Data
FBGA
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NAND interface – –
TSOP48 12 x 20 mm
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Supply voltage: 1.8 V, 3.0 V Page size – – x 8 device: (512 + 16 spare) bytes x 16 device: (256 + 8 spare) words x 8 device: (16 K + 512 spare) bytes x 16 device: (8 K + 256 spare) words Random access: 12 µs (3 V)/15 µs (1.8 V) (max) Sequential access: 30 ns (3 V)/50 ns (1.