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NAND512W3A2D - SLC NAND flash memories

Download the NAND512W3A2D datasheet PDF. This datasheet also covers the NAND512R3A2D variant, as both devices belong to the same slc nand flash memories family and are provided as variant models within a single manufacturer datasheet.

General Description

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Key Features

  • High density SLC NAND flash memories.
  • 512 Mbit memory array.
  • Cost effective solutions for mass storage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NAND512R3A2D-Numonyx.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NAND512W3A2D
Manufacturer Numonyx
File Size 725.64 KB
Description SLC NAND flash memories
Datasheet download datasheet NAND512W3A2D Datasheet

📁 Similar Datasheet

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NAND512-A 128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories STMicroelectronics
NAND512-B NAND Flash Memory STMicroelectronics
NAND512-M (NANDxxx-M) NAND Flash Memories ST Microelectronics

Other Datasheets by Numonyx

Part Number Description
NAND512W3A2C NAND Flash Memories
NAND512W3A2S NAND SLC small page 70 nm Discrete
NAND512W4A2C NAND Flash Memories
NAND512W4A2D SLC NAND flash memories
NAND512W4A2S NAND SLC small page 70 nm Discrete

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NAND512xxA2D 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features „ High density SLC NAND flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications „ NAND interface – x8 or x16 bus width – Multiplexed address/data „ Supply voltage: 1.8 V, 3 V „ Page size – x8 device: (512 + 16 spare) bytes – x16 device: (256 + 8 spare) words „ Block size – x8 device: (16 K + 512 spare) bytes – x16 device: (8 K + 256 spare) words „ Page read/program – Random access: 12 µs (3 V)/15 µs (1.8 V) (max) – Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min) – Page program time: 200 µs (typ) „ Copy back program mode „ Fast block erase: 1.