Datasheet4U Logo Datasheet4U.com

NAND512W3A2S - NAND SLC small page 70 nm Discrete

Datasheet Summary

Features

  • Density.
  • 512 Mbit: 4096 blocks.
  • NAND Flash interface.
  • x8 or x16 bus width.
  • Multiplexed address/data.
  • Memory configuration.
  • Page size: x8 device: (512 + 16 spare) Bytes x16 device: (256 + 8 spare) Words.
  • Block size: x8 device: (16K + 512 spare) Bytes x16 device: (8K + 256 spare) Words.
  • Supply voltage: 1.8 V, 3 V.
  • Read/write performance.
  • Random access: 12 µs (3 V)/15 µs(1.8 V) (max).
  • Sequential access: 30 ns (.

📥 Download Datasheet

Datasheet preview – NAND512W3A2S

Datasheet Details

Part number NAND512W3A2S
Manufacturer Numonyx
File Size 710.02 KB
Description NAND SLC small page 70 nm Discrete
Datasheet download datasheet NAND512W3A2S Datasheet
Additional preview pages of the NAND512W3A2S datasheet.

📁 Similar Datasheet

  • NAND512W3A2C - (NAND512xxA2C) NAND Flash Memories (STMicroelectronics)
  • NAND512W4A2C - (NAND512xxA2C) NAND Flash Memories (STMicroelectronics)
  • NAND512-A - 128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories (STMicroelectronics)
  • NAND512-B - NAND Flash Memory (STMicroelectronics)
  • NAND512-M - (NANDxxx-M) NAND Flash Memories (ST Microelectronics)
  • NAND512R3A2C - (NAND512xxA2C) NAND Flash Memories (STMicroelectronics)
  • NAND512R4A2C - (NAND512xxA2C) NAND Flash Memories (STMicroelectronics)
  • NAND01G-A - 128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories (STMicroelectronics)
  • NAND01G-B - (NAND0xG-B) NAND Flash Memory (ST Microelectronics)
  • NAND01G-B2B - (NAND0xG-B2x) NAND Flash Memory (ST Microelectronics)
Other Datasheets by Numonyx

Full PDF Text Transcription

Click to expand full text
Numonyx® NAND SLC small page 70 nm Discrete 512 Mbit, 528 Byte/264 Word page, x8/x16, 1.8 V/3 V Features  Density – 512 Mbit: 4096 blocks  NAND Flash interface – x8 or x16 bus width – Multiplexed address/data  Memory configuration – Page size: x8 device: (512 + 16 spare) Bytes x16 device: (256 + 8 spare) Words – Block size: x8 device: (16K + 512 spare) Bytes x16 device: (8K + 256 spare) Words  Supply voltage: 1.8 V, 3 V  Read/write performance – Random access: 12 µs (3 V)/15 µs(1.8 V) (max) – Sequential access: 30 ns (3 V)/50 ns (1.8 V)(min) – Page program time: 200 µs (typ) – Block erase time: 2 ms (typ) – Programming performance (typ): x8 device: 2.3 MByte/s x16 device: 2.
Published: |