NAND512W3A2S - NAND SLC small page 70 nm Discrete

Numonyx

Key Features

Density.
512 Mbit: 4096 blocks.
NAND Flash interface.
x8 or x16 bus width.
Multiplexed address/data.
Memory configuration.
Page size: x8 device: (512 + 16 spare) Bytes x16 device: (256 + 8 spare) Words.
Block size: x8 device: (16K + 512 spare) Bytes x16 device: (8K + 256 spare) Words.
Supply voltage: 1.8 V, 3 V.
Read/write performance.
Random access: 12 µs (3 V)/15 µs(1.8 V) (max).
Sequential access: 30 ns (.

NAND512W3A2S nand slc small page 70 nm discrete by Numonyx - Datasheet Preview

Datasheet Details

Part number	NAND512W3A2S
Manufacturer	Numonyx
File Size	710.02 KB
Description	NAND SLC small page 70 nm Discrete
Datasheet	NAND512W3A2S Datasheet

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Full PDF Text Transcription (Reference)

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Numonyx® NAND SLC small page 70 nm Discrete 512 Mbit, 528 Byte/264 Word page, x8/x16, 1.8 V/3 V Features  Density – 512 Mbit: 4096 blocks  NAND Flash interface – x8 or x16 bus width – Multiplexed address/data  Memory configuration – Page size: x8 device: (512 + 16 spare) Bytes x16 device: (256 + 8 spare) Words – Block size: x8 device: (16K + 512 spare) Bytes x16 device: (8K + 256 spare) Words  Supply voltage: 1.8 V, 3 V  Read/write performance – Random access: 12 µs (3 V)/15 µs(1.8 V) (max) – Sequential access: 30 ns (3 V)/50 ns (1.8 V)(min) – Page program time: 200 µs (typ) – Block erase time: 2 ms (typ) – Programming performance (typ): x8 device: 2.3 MByte/s x16 device: 2.