PF38F5070Mxxxx
PF38F5070Mxxxx is StrataFlash Cellular Memory manufactured by Numonyx.
Features
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- High-Performance Read, Program and Erase
- 96 ns initial read access
- 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output
- 133 MHz with zero wait-state synchronous burst reads: 5.5 ns clock-to-data output
- 8-, 16-, and continuous-word synchronous-burst Reads
- Programmable WAIT configuration
- Customer-configurable output driver impedance
- Buffered Programming: 2.0 µs/Word (typ), 512-Mbit 65 nm; Block Erase: 0.9 s per block (typ)
- 20 µs (typ) program/erase suspend Architecture
- 16-bit wide data bus
- Multi-Level Cell Technology
- Symmetrically-Blocked Array Architecture
- 256-Kbyte Erase Blocks
- 1-Gbit device: Eight 128-Mbit partitions
- 512-Mbit device: Eight 64-Mbit partitions
- 256-Mbit device: Eight 32-Mbit partitions.
- 128-Mbit device: Eight 16-Mbit partitions.
- Read-While-Program and Read-While-Erase
- Status Register for partition/device status
- Blank Check feature
Quality and Reliability
- Expanded temperature:
- 30 °C to +85 °C
- Minimum 100,000 erase cycles per block
- ETOX™ X Process Technology (65 nm)
- ETOX™ IX Process Technology (90 nm)
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Power
- Core voltage: 1.7 V
- 2.0 V
- I/O voltage: 1.7 V
- 2.0 V
- Standby current: 60 µA (typ) for 512-Mbit, 65 nm
- Deep Power-Down mode: 2 µA (typ)
- Automatic Power Savings mode
- 16-word synchronous-burst read current: 23 m A (typ) @ 108 MHz; 24 m A (typ) @ 133 MHz Software
- Numonyx™ Flash Data Integrator (Numonyx™ FDI)...
